unisonic technologies co., ltd 5n90 power mosfet www.unisonic.com.tw 1 of 6 copyright ? 2015 unisonic technologies co., ltd qw-r502-499.h 5 a , 900v n-channel power mosfet ? description the utc 5n90 is a n-channel mode power mosfet using utc?s advanced technology to provide customers with planar stripe and dmos technology. this technology specialized in allowing a minimum on-state re sistance and superior switching performance. it also can withstand high energy pulse in the avalanche and commutation mode. the utc 5n90 is universally applied in high efficiency switch mode power supply. ? features * r ds(on) < 2.8 ? @ v gs =10v, i d =2.5a * high switching speed * improved dv/dt capability * 100% avalanche tested ? symbol ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 5n90l-ta3-t 5n90g-ta3-t to-220 g d s tube 5n90l-tf3-t 5n90g-tf3-t to-220f g d s tube 5n90l-tf1t 5n90g-tf1t to-220f1 g d s tube 5n90l-t2q-t 5N90G-T2Q-T to-262 g d s tube 5n90l-tq2-t 5n90g-tq2-t to-263 g d s tube 5n90l-tq2-r 5n90g-tq2-r to-263 g d s tape reel 5n90l-t3p-t 5n90g-t3p-t to-3p g d s tube note: pin assignment: g: gate d: drain s: source
5n90 power mosfet unisonic technologies co., ltd 2 of 7 www.unisonic.com.tw qw-r502-499.h ? marking
5n90 power mosfet unisonic technologies co., ltd 3 of 7 www.unisonic.com.tw qw-r502-499.h ? absolute maximum ratings (t c =25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 900 v gate-source voltage v gss 30 v drain current continuous i d 5 a pulsed (note 2) i dm 12 a avalanche energy single pulsed (note 3) e as 350 mj repetitive (note 2) e ar 5.1 mj peak diode recovery dv/dt (note 4) dv/dt 4.0 v/ns power dissipation to-220/to-262/to-263 p d 125 w to-220f/to-220f1 47 to-3p 240 junction temperature t j +150 c storage temperature t stg -55~+150 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitive rating: pulse width limit ed by maximum junction temperature 3. l=28mh, i as =5a, v dd = 50v, r g =25 ? , starting t j =25c 4. i sd 5.4a, di/dt 200a/ s, v dd bv dss , starting t j =25c ? thermal data parameter symbol ratings unit junction to ambient to-220/to-220f to-220f1/to-262 to-263 ja 62.5 c/w to-3p 40 junction to case to-220/to-262 to-263 jc 1 c/w to-220f/to-220f1 3.66 to-3p 0.52
5n90 power mosfet unisonic technologies co., ltd 4 of 7 www.unisonic.com.tw qw-r502-499.h ? electrical characteristics (t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =250a 900 v breakdown voltage temperature coefficient ? bv dss / ? t j i d =250 a,referenced to 25c 1.0 v/c drain-source leakage current i dss v ds =900v, v gs =0v 10 a v ds =720v, t c =125c 100 a gate-source leakage current forward i gss v ds =0v ,v gs =30v 100 na reverse v ds =0v ,v gs =-30v -100 na on characteristics gate threshold voltage v gs ( th ) v ds =v gs , i d =250a 3.0 5.0 v drain-source on-state resistance r ds ( on ) v gs =10v, i d =2.5a 2.0 2.8 ? forward transconductance g fs v ds =50v, i d =2.5a (note 1) 4.0 s dynamic parameters input capacitance c iss v ds =25v,v gs =0v, f=1.0mhz i g =3.3ma 1200 1550 pf output capacitance c oss 110 145 pf reverse transfer capacitance c rss 13 17 pf switching parameters total gate charge q g v ds =120v, v gs =10v, i d =5a (note 1,2) 140 160 nc gate-source charge q gs 12 nc gate-drain charge q gd 30 nc turn-on delay time t d ( on ) v dd =30v, i d =1a, r g =25 ? (note 1,2) 70 90 ns turn-on rise time t r 106 140 ns turn-off delay time t d ( off ) 196 220 ns turn-off fall time t f 110 130 ns source- drain diode ratings and characteristics maximum body-diode continuous current i s 5 a maximum body-diode pulsed current i sm 12 a drain-source diode forward voltage v sd i s =5a, v gs =0v 1.4 v body diode reverse recovery time t r r v gs =0v, i s =5.4a, di f /dt=100a/ s (note 1) 610 ns body diode reverse recovery charge q rr 5.26 c notes: 1. pulse test: pulse width 300s, duty cycle 2% 2. essentially independent of operating temperature
unisonic technologies co., ltd 5n90 power mosfet unisonic technologies co., ltd 5 of 7 www.unisonic.com.tw qw-r502-499.h ? test circuits and waveforms v ds + - dut r g dv/dt controlled by r g i sd controlled by pulse period v dd peak diode recovery dv/d t test circuit & waveforms same type as dut i sd v gs l v gs (driver) i sd (dut) v ds (dut) d= gate pulse width gate pulse period 10v di/dt body diode reverse current i rm body diode recovery dv/dt v dd v sd body diode forward voltage drop i fm , body diode forward current driver
5n90 power mosfet unisonic technologies co., ltd 6 of 7 www.unisonic.com.tw qw-r502-499.h ? test circuits and waveforms(cont.) 50k ? 300nf dut v ds 10v 12v charge q gs q gd q g gate charge test circuit gate charge waveforms v gs v gs 200nf same type as dut 3ma 10v t p r g dut l v ds i d v dd unclamped inductive switching test circuit t p v dd i as bv dss i d (t) v ds (t) time e as = 2 1 li as 2 bv dss bv dss -v dd unclamped inductive switching waveforms
5n90 power mosfet unisonic technologies co., ltd 7 of 7 www.unisonic.com.tw qw-r502-499.h ? typical characteristics drain current, i d (a) drain current, i d (a) body-diode continuous current, i s (a) drain current, i d (a) utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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